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Polysilicon (Multicrystalline) Wafer

Description

Polycrystalline silicon wafers are the core material for making cells.
The products are widely used in photovoltaic power generation, communications, transportation, and the production and life power supply of residents in remote areas. They can also be used in new fields such as solar lights, lawns and rooftop solar photovoltaic power generation. The Polysilicon (Multicrystalline) wafers produced by AEM have good surface quality and high conversion efficiency.

Specifications

Materials	Polysilicon (Multicrystalline) Wafer
Symbol	Si
Process	Diamond wire cutting
Conduction type/ Dopant	P-type or N-type
Side width	156.75.00~157.25mm
Thickness	200±20μm
Conversion efficiency	>18.8%

Technical Data

Material Characters
Crystal Growth Method	DSS	-
Conduction type/ Dopant	P/Boron, Gallium	Conductivity type tester
Resistivity (Ω·cm)	0.8～3.5	Non-contact testing
Lifetime of brick (μs)	≥4 μs	Semilab WT-2000D
Textured Surface Reflectivity	17.5% ± 2.5%	Standard Diffusion 8 Integration Spheree Spectroscopic-Reflectometer
Oxygen Concentration (atoms/cm3)	≤5.0E17 （10ppma）	FTIR(ASTM F1188)
Carbon Concentration (atoms/cm3)	≤5.0E17 （10ppma）	FTIR(ASTM F1391)

Properties

Dimension
Side Length	156.75/157.25±0.25 mm	Digital vernier caliper or wafer inspection system
Thickness	170-200 μm	Wafer inspection system
TTV	≤30 μm	Wafer inspection system
Saw mark	≤15 μm	Wafer inspection system
Warpage	≤50 μm	Wafer inspection system
Verticality of side	90 o±0.3o	Wafer inspection system (CCD)
Chamfer Hypotenuse	0.45~ 2.00 mm	VernierCaliper /CCD
Chamfer Cathetus	0.31~ 1.42 mm
Chamfer angle	45 o±10o