Gallium Sulfide Evaporation Material (GaS)
|Material Type||Gallium Sulfide|
|Melting Point (°C)||965|
|Theoretical Density (g/cc)||3.86|
|Thermal Evaporation Techniques||
|E-Beam Crucible Liner Material||-|
|Temp. (°C) for Given Vap. Press. (Torr)||-|
Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm. This layer structure is similar to GaTe, GaSe and InSe. An unusual metastable form, with a distorted wurtzite structure has been reported as being produced using MOCVD. The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example GatBu2(S2CNMe2) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga2+ S2-.
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