Gallium Oxide Sputtering Targets (Ga2O3)
|Material Type||Gallium Oxide|
|Melting Point (°C)||1900|
|Exact Mass||187.835 g/mol|
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ε) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized.
Gallium Oxide Sputtering Target, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Other Information of Gallium Oxide Sputtering Targets
• Gate Dielectric
• For CMOS
• High purity
• Custom Sizes Available
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum,
• 99.9% ex Strontium Minimum Purity
•Up to 12'' Diameter Targets Available
•Planar Tiles Up to 8'' X 5'' for Larger Target Configurations