IGZO Sputtering Targets (InGaZnO4)
| Material Type | Indium Gallium Zinc Oxide |
| Symbol | IGZO, InGaZnO4, In2Ga2ZnO7 |
| Color/Appearance | White/Beige/Grey/Green, Solid |
| Melting Point (°C) | N/A |
| Theoretical Density (g/cc) | InGaZnO4 6.12, In2Ga2ZnO7 6.5 |
| Z Ratio | N/A |
| Sputter | RF, DC |
|
Max Power Density* (Watts/Square Inch) |
|
| Type of Bond | Indium, Elastomer |
| Comments |
IGZO Sputtering Target
Indium Gallium Zinc Oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxidesemiconductors.
IGZO Sputtering Target Information
Indium Gallium Zinc Oxide Sputtering Targets
Purity is 99.99%;
Circular: Diameter <= 14inch, Thickness >= 1mm;
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Relative Density > 90%
Other Information of IGZO Sputtering Target
Applications• Transparent conductive flim• Enabling LCDs • MEMS displays |
Features• High purity• Custom Sizes Available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options• 99.9% Minimum Purity• Cu or Mo backing palte with indium bonding • Planar and rotary target aviailable |
Related Products of IGZO Sputtering Target
|
Ceramic Sputtering Targets |
||
|
Evaporation Materials |
Crucibles N/A |
Metal Powders Zinc Powder |
Click for a downloadable datasheet on the IGZO Sputtering Targets (InGaZnO4)
Can't find the downloadable datasheet you need? Click here to send email to get it.
Click here for answers to some of the most common questions we get asked.
