Indium Gallium Zinc Oxide (IGZO) Sputtering Targets (InGaZnO4)
| Material Type | Indium Gallium Zinc Oxide |
| Symbol | IGZO, InGaZnO4, In2Ga2ZnO7 |
| Color/Appearance | White/Beige/Grey/Green, Solid |
| Melting Point (°C) | N/A |
| Theoretical Density (g/cc) | InGaZnO4 6.12, In2Ga2ZnO7 6.5 |
| Z Ratio | N/A |
| Sputter | RF, DC |
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Max Power Density* (Watts/Square Inch) |
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| Type of Bond | Indium, Elastomer |
| Comments |
General of IGZO Sputtering Targets
Indium Gallium Zinc Oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxidesemiconductors.
Material Notes of IGZO Sputtering Targets
Indium Gallium Zinc Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Relative Density > 90%
Other Information of IGZO Sputtering Targets
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Applications • Transparent conductive flim • Enabling LCDs • MEMS displays |
Features • High purity • Custom Sizes Available |
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Manufacturing Process • Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options • 99.9% Minimum Purity • Cu or Mo backing palte with indium bonding • Planar and rotary target aviailable |
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