IGZO Sputtering Targets (InGaZnO4)
| Material Type | Indium Gallium Zinc Oxide |
| Symbol | IGZO, InGaZnO4, In2Ga2ZnO7 |
| Color/Appearance | White/Beige/Grey/Green, Solid |
| Melting Point (°C) | N/A |
| Theoretical Density (g/cc) | InGaZnO4 6.12, In2Ga2ZnO7 6.5 |
| Z Ratio | N/A |
| Sputter | RF, DC |
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Max Power Density* (Watts/Square Inch) |
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| Type of Bond | Indium, Elastomer |
| Comments |
IGZO Sputtering Targets
Indium Gallium Zinc Oxide (IGZO) is a semiconducting material. It consists of Indium (In), Gallium (Ga), Zinc (Zn), and Oxygen (O). High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over Zinc Oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors.
IGZO Sputtering Targets Information
Indium Gallium Zinc Oxide Sputtering Targets
Purity: 99.99%;
Circular: Diameter <= 14 inch, Thickness >= 1 mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1 mm.
Relative Density > 90%
More Information on IGZO Sputtering Targets
Applications• Transparent conductive flim• Enabling LCDs • MEMS displays |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.99% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of IGZO Sputtering Targets
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Ceramic Sputtering Targets |
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Evaporation Materials |
Crucibles N/A |
Metal Powders Zinc Powder |
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