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Indium Gallium Zinc Oxide (IGZO) Sputtering Targets (InGaZnO4)

Indium Gallium Zinc Oxide (IGZO) Sputtering Targets (InGaZnO4)
Material Type Indium Gallium Zinc Oxide
Symbol IGZO, InGaZnO4, In2Ga2ZnO7
Color/Appearance White/Beige/Grey/Green, Solid
Melting Point (°C) N/A
Theoretical Density (g/cc) InGaZnO4 6.12, In2Ga2ZnO7 6.5
Z Ratio N/A
Sputter RF, DC
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer

General of IGZO Sputtering Targets

Indium Gallium Zinc Oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxidesemiconductors.

Material Notes of IGZO Sputtering Targets

Indium Gallium Zinc Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. 

Relative Density > 90%

Other Information of IGZO Sputtering Targets

• Transparent conductive flim
• Enabling LCDs

• MEMS displays

• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

99.9% Minimum Purity

• Cu or Mo backing palte with indium bonding

• Planar and rotary target aviailable

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