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Praseodymium Sputtering Targets (Pr)

Praseodymium Sputtering Targets (Pr)
Material Type Praseodymium
Symbol Pr
Atomic Weight 140.90765
Atomic Number 59
Color/Appearance Silvery White, Yellowish Tinge, Metallic
Thermal Conductivity 13 W/m.K
Melting Point (°C) 931
Coefficient of Thermal Expansion 6.7 x 10-6/K
Theoretical Density (g/cc) 6.77
Z Ratio **1.00
Sputter DC
UN Number 3208

General

Praseodymium is the third member of the lanthanide series. In the periodic table, it appears between the lanthanides cerium to its left and neodymium to its right, and above the actinide protactinium. It is a ductile metal with a hardness comparable to that of silver. Its 59 electrons are arranged in the configuration [Xe]4f36s2; theoretically, all five outer electrons can act as valence electrons, but the use of all five requires extreme conditions and normally, praseodymium only gives up three or sometimes four electrons in its compounds. Praseodymium is the first of the lanthanides to have an electron configuration conforming to the Aufbau principle, which predicts the 4f orbitals to have a lower energy level than the 5d orbitals; this does not hold for lanthanum and cerium, because the sudden contraction of the 4f orbitals does not happen until after lanthanum, and is not strong enough at cerium to avoid occupying the 5d subshell. Nevertheless, solid praseodymium takes on the [Xe]4f25d16s2 configuration, with one electron in the 5d subshell like all the other trivalent lanthanides (all but europium and ytterbium, which are divalent in the metallic state).

Material Notes

Praseodymium Sputtering Targets, Purity is 99.9%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Due to the highly reactive nature of these materials, packaging in oil is required to reduce the opportunity for oxidation or other reaction.
 


Other Information of Praseodymium Sputtering Targets

Applications
Electronics
• Semiconductor
• Flat panel displays
Features
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade

Manufacturing Process
Refining
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment
Options
99.999% minimum purity
• Semiconductor grade aluminum alloys available
  Al/Si,Al/Cu,Al/Cu/Si
• Planar circular targets up to 18'' (457mm) diameter
• Planar tiles up to 48'' (1200mm) X 15.75'' (400mm) for larger target configurations
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
 
 
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