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Germanium Sputtering Targets (Ge)

Germanium Sputtering Targets (Ge)
Material Type Germanium
Symbol Ge (N-type)
Atomic Weight 72.63
Atomic Number 32
Color/Appearance Grayish White, Semi-Metallic
Thermal Conductivity 60 W/m.K
Melting Point (°C) 937
Bulk Resistivity 5-40 ohm-cm
Coefficient of Thermal Expansion 6 x 10-6/K
Theoretical Density (g/cc) 5.32
Dopant Antimony
Z Ratio 0.516
Sputter DC (doped), RF
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer
Comments Excellent films from E-beam.


Germanium is a chemical element with symbol Ge and atomic number 32. It is a lustrous, hard, grayish-white metalloid in the carbon group, chemically similar to its group neighbors tin and silicon. Pure germanium is a semiconductor with an appearance similar to elemental silicon. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Unlike silicon, it is too reactive to be found naturally on Earth in the free (elemental) state.

Material Notes

Germanium Sputtering Targets, Purity is 99.999%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

Other Information of Germanium Sputtering Targets

• Semiconductor
• Flat panel displays
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade

Manufacturing Process
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment
99.999% minimum purity
• Semiconductor grade aluminum alloys available
• Planar circular targets up to 18'' (457mm) diameter
• Planar tiles up to 48'' (1200mm) X 15.75'' (400mm) for larger target configurations
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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