Hafnium Oxide Sputtering Targets (HfO2)
| Material Type | Hafnium Oxide |
| Symbol | HfO2 |
| Color/Appearance | White, Crystalline Solid |
| Melting Point (°C) | 2,758 |
| Theoretical Density (g/cc) | 9.68 |
| Z Ratio | **1.00 |
| Sputter | RF, RF-R |
|
Max Power Density* (Watts/Square Inch) |
20 |
| Type of Bond | Indium, Elastomer |
| Export Control (ECCN) | 1C231 |
| Comments | Film HfO. |
General
Material Notes
Hafnium Oxide Sputtering Targets, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
Other Information of Hafnium Oxide Sputtering Targets
|
Applications • Ferroelectric • Gate Dielectric • For CMOS |
Features • High purity • Custom Sizes Available |
|
Manufacturing Process • Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options • 99.9% ex Strontium Minimum Purity •Up to 12'' Diameter Targets Available •Planar Tiles Up to 8'' X 5'' for Larger Target Configurations |
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