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Hafnium Oxide Sputtering Targets (HfO2)

Hafnium Oxide Sputtering Targets (HfO2)
Material Type Hafnium Oxide
Symbol HfO2
Color/Appearance White, Crystalline Solid
Melting Point (°C) 2,758
Theoretical Density (g/cc) 9.68
Z Ratio **1.00
Sputter RF, RF-R
Max Power Density*
(Watts/Square Inch)
20
Type of Bond Indium, Elastomer
Export Control (ECCN) 1C231
Comments Film HfO.

General

Hafnium(IV) oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.

Material Notes

Hafnium Oxide Sputtering Targets, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
 


Other Information of Hafnium Oxide Sputtering Targets

Applications
  Ferroelectric
• Gate Dielectric

• For CMOS

Features
• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options
99.9% ex Strontium Minimum Purity

•Up to 12'' Diameter Targets Available

•Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

 
 
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