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Hafnium Carbide Sputtering Targets (HfC)

Hafnium Carbide Sputtering Targets (HfC)
Material Type Hafnium Carbide
Symbol HfC
Melting Point (°C) ~3,890
Theoretical Density (g/cc) 12.2
Z Ratio 1.00
Sputter RF
Type of Bond Indium, Elastomer
Export Control (ECCN) 1C231

General

Hafnium carbide (HfC) is a chemical compound of hafnium and carbon. With a melting point of about 3900°C, it is one of the most refractory binary compounds known.However, it has a low oxidation resistance, with the oxidation starting at temperatures as low as 430°C. Hafnium carbide is usually carbon deficient and therefore its composition is often expressed as HfCx (x = 0.5 to 1.0). It has a cubic (rock-salt) crystal structure at any value of x.

Material Notes

Hafnium Carbide Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
 



Other Information of Hafnium Carbide Sputtering Targets
 

Applications
  PVD and CVD display
• Semiconductor

• Optical

Features
• High purity
• Custom Sizes Available

 

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options
• 99% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

 

 

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