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AEM Deposition

Bismuth Titanate Sputtering Targets (Bi4Ti3O3)

Bismuth Titanate Sputtering Targets (Bi4Ti3O3)
Bismuth Titanate Sputtering Targets (Bi4Ti3O3)
Material Type Bismuth Titanate
Symbol Bi4Ti3O12
Color/Appearance Yellow, Solid
Melting Point (°C) 870
Relative Density (g/cc) >90%
Z Ratio N/A
Sputter RF, DC
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer


Material Notes

Bismuth Titanate Sputtering Targets, Purity is 99.99%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

Other Information of Bismuth Titanate Sputtering Targets

• Gate Dielectric

• For CMOS

• Non-volatile Memory
• Thin film capacitor


• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

99.9% ex Strontium Minimum Purity

•Up to 12'' Diameter Targets Available

•Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

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