Bismuth Dysprosium Iron Gallate Sputtering Targets (Bi2DyFe4GaO12)
| Material Type | Bismuth Dysprosium Iron Gallate |
| Symbol | Bi2DyFe4GaO12 |
| Color/Appearance | Solid |
| Melting Point (°C) | N/A |
| Relative Density (g/cc) | >90% |
| Z Ratio | N/A |
| Sputter | RF, DC |
|
Max Power Density* (Watts/Square Inch) |
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| Type of Bond | Indium, Elastomer |
| Comments |
Bismuth Dysprosium Iron Gallate Sputtering Targets
Bismuth Dysprosium Iron Gallate Sputtering Targets
Purity: 99.9%;
Circular: Diameter <= 14 inch, Thickness >= 1 mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1 mm.
More Information on Bismuth Dysprosium Iron Gallate Sputtering Targets
Applications• Ferroelectric• Gate Dielectric • For CMOS |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.9% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of Bismuth Dysprosium Iron Gallate Sputtering Targets
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Pure Metal Sputtering Targets |
|
Ceramic Sputtering Targets |
|
Evaporation Materials |
Crucibles N/A |
Metal Powders |
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