Bismuth Dysprosium Iron Gallate Sputtering Targets (Bi2DyFe4GaO12)
| Material Type | Bismuth Dysprosium Iron Gallate |
| Symbol | Bi2DyFe4GaO12 |
| Color/Appearance | Solid |
| Melting Point (°C) | N/A |
| Relative Density (g/cc) | >90% |
| Z Ratio | N/A |
| Sputter | RF, DC |
|
Max Power Density* (Watts/Square Inch) |
|
| Type of Bond | Indium, Elastomer |
| Comments |
Bismuth Dysprosium Iron Gallate Sputtering Target
Bismuth Dysprosium Iron Gallate Sputtering Targets
Purity is 99.9%;
Circular: Diameter <= 14inch, Thickness >= 1mm;
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Other Information of Bismuth Dysprosium Iron Gallate Sputtering Target
Applications• Ferroelectric• Gate Dielectric • For CMOS |
Features• High purity• Custom Sizes Available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options• 99.9% ex Strontium Minimum Purity•Up to 12'' Diameter Targets Available •Planar Tiles Up to 8'' X 5'' for Larger Target Configurations |
Related Products of Bismuth Dysprosium Iron Gallate Sputtering Target
|
Pure Metal Sputtering Targets |
|
Ceramic Sputtering Targets |
|
Evaporation Materials |
Crucibles N/A |
Metal Powders |
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