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Bismuth Dysprosium Iron Gallate Sputtering Targets (Bi2DyFe4GaO12)

Material Type	Bismuth Dysprosium Iron Gallate
Symbol	Bi₂DyFe₄GaO₁₂
Color/Appearance	Solid
Melting Point (°C)	N/A

Relative Density (g/cc)	>90%
Z Ratio	N/A
Sputter	RF, DC
Max Power Density* (Watts/Square Inch)
Type of Bond	Indium, Elastomer
Comments

Bismuth Dysprosium Iron Gallate Sputtering Targets

Bismuth Dysprosium Iron Gallate Sputtering Targets
Purity: 99.9%;
Circular: Diameter <= 14 inch, Thickness >= 1 mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1 mm.

More Information on Bismuth Dysprosium Iron Gallate Sputtering Targets

Applications

• Ferroelectric
• Gate Dielectric

• For CMOS

Features

• High purity
• Custom sizes available

Manufacturing Process

• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options

• 99.9% minimum purity

• Smaller sizes also available for R&D applications

• Sputtering target bonding service

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