Bismuth Dysprosium Iron Gallate Sputtering Targets (Bi2DyFe4GaO12)
| Material Type | Bismuth Dysprosium Iron Gallate |
| Symbol | Bi2DyFe4GaO12 |
| Color/Appearance | Solid |
| Melting Point (°C) | N/A |
| Relative Density (g/cc) | >90% |
| Z Ratio | N/A |
| Sputter | RF, DC |
|
Max Power Density* (Watts/Square Inch) |
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| Type of Bond | Indium, Elastomer |
| Comments |
General
Material Notes
Bismuth Dysprosium Iron Gallate Sputtering Targets, Purity is 99.9%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Other Information of Bismuth Dysprosium Iron Gallate Sputtering Targets
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Applications • Ferroelectric • Gate Dielectric • For CMOS |
Features • High purity • Custom Sizes Available |
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Manufacturing Process • Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options • 99.9% ex Strontium Minimum Purity •Up to 12'' Diameter Targets Available •Planar Tiles Up to 8'' X 5'' for Larger Target Configurations |
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