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Bismuth Antimony Telluride Sputtering Targets (Bi0.5Sb1.5Te3)

Bismuth Antimony Telluride Sputtering Targets (Bi0.5Sb1.5Te3)
Material Type Bismuth Antimony Telluride
Symbol BixSb(2-x)Te3
Color/Appearance Grey, Solid
Melting Point (°C) N/A
Theoretical Density (g/cc) N/A
Water Solubility Insoluble
Sputter RF, RF-R, DC
Type of Bond Indium, Elastomer
Comments  

General

Crystals of bismuth antimonides are synthesized by melting bismuth and antimony together under inert gas or vacuum. Zone melting is used to decrease the concentration of impurities. When synthesizing single crystals of bismuth antimonides, it is important that impurities are removed from the samples, as oxidation occurring at the impurities leads to polycrystalline growth.

Material Notes

Bismuth Antimony Sputtering Target, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

Certificate of Analysis (COA) for 99.99% Purity Bi0.5Sb1.5Te3 Sputtering Target:



Other Information of Bismuth Antimony Sputtering Targets

 

Applications
 Semiconductor
• Chemical vapor deposition (CVD)
• Physical vapor deposition (PVD) display

Features
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade


Manufacturing Process
Refining
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment

Options
99.999% minimum purity
• Planar circular targets up to 18'' (457mm) diameter
• Planar tiles up to 48'' (1200mm) X 15.75'' (400mm) for larger target configurations
• Smaller sizes also available for R&D applications
• Sputtering target bonding service

 

 

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