Thin Film Substrate
Bismuth Antimony Telluride Sputtering Targets (Bi0.5Sb1.5Te3)
|Material Type||Bismuth Antimony Telluride|
|Melting Point (°C)||N/A|
|Theoretical Density (g/cc)||N/A|
|Sputter||RF, RF-R, DC|
|Type of Bond||Indium, Elastomer|
Crystals of bismuth antimonides are synthesized by melting bismuth and antimony together under inert gas or vacuum. Zone melting is used to decrease the concentration of impurities. When synthesizing single crystals of bismuth antimonides, it is important that impurities are removed from the samples, as oxidation occurring at the impurities leads to polycrystalline growth.
Bismuth Antimony Sputtering Target, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
Certificate of Analysis (COA) for 99.99% Purity Bi0.5Sb1.5Te3 Sputtering Target:
Other Information of Bismuth Antimony Sputtering Targets