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Tantalum Nitride Sputtering Targets (TaN)

Tantalum Nitride Sputtering Targets (TaN)
Material Type Tantalum Nitride
Symbol TaN
Color/Appearance Black, Crystalline Solid
Melting Point (°C) 3,360
Theoretical Density (g/cc) 16.3
Z Ratio **1.00
Sputter RF, RF-R
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer
Comments Evaporate Ta in 10-3 Torr N2.


Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.

Material Notes

Tantalum Nitride Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.


Other Information of Tantalum Nitride Sputtering Targets

  PVD (physical vapor deposition) and CVD (chemical vapor) deposition display
• Semiconductor

• Optical

• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

• 99% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

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