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Aluminum Nitride Sputtering Targets (AlN)

Aluminum Nitride Sputtering Targets (AlN)
Material Type Aluminum Nitride
Symbol AlN
Color/Appearance Bluish White, Crystalline Solid
Melting Point (°C) ~2,200
Theoretical Density (g/cc) 3.26
Z Ratio **1.00
Sputter RF-R
Max Power Density*
(Watts/Square Inch)
20
Type of Bond Elastomer
Comments Decomposes. Reactive evap in 10-3 T N2 with glow discharge.

General

Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics.

Material Notes

Aluminum Nitride Sputtering Target, Purity is 99.5%;  Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. "Elastomer" Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.

 


Other Information of Aluminum Nitride Sputtering Targets

Applications
  PVD (physical vapor deposition) and CVD (chemical vapor) deposition display
• Semiconductor

• Optical

Features
• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options
• 99% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

 
 
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