Thin Film Substrate
Tantalum Silicide Sputtering Targets (TaSi2)
|Material Type||Tantalum Silicide|
|Melting Point (°C)||2,200|
|Theoretical Density (g/cc)||9.14|
|Sputter||RF, RF-R, DC|
|Type of Bond||Indium, Elastomer|
Tantalum silicide (TaSi2) thin films were sputter deposited on P- type and N- type silicon substrates using VARIAN 3125 magnetron DC sputtering system with TaSi 2 target. AEM specializes in producing high purity Tantalum Silicide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.
Tantalum Silicide Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
Other Information of Tantalum Silicide Sputtering Targets
• Cleaning and final packaging, Cleaned for use in vacuum,
• Up to 12'' Diameter Targets Available
• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations