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Tantalum Carbide Sputtering Targets (TaC)

Tantalum Carbide Sputtering Targets (TaC)
Material Type Tantalum Carbide
Symbol TaC
Melting Point (°C) 3,880
Theoretical Density (g/cc) 13.9
Z Ratio **1.00
Sputter RF
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer


Tantalum carbides form a family of binary chemical compounds of tantalum and carbon with the empirical formula TaCx, where x usually varies between 0.4 and 1. They are extremely hard, brittle, refractory ceramic materials with metallic electrical conductivity. They appear as brown-gray powders, which are usually processed by sintering. Being important cermet materials, tantalum carbides are commercially used in tool bits for cutting applications and are sometimes added to tungsten carbide alloys.

Material Notes

Tantalum Carbide Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.


Other Information of Tantalum Carbide Sputtering Targets

  PVD and CVD display
• Semiconductor

• Optical

• High purity
• Custom Sizes Available


Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

• 99.9% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations



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