Gallium Arsenide Crystal
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors.
Gallium Arsenide Crystal Physical Properties
|
Material |
GaAs |
|
Growth Method |
VGF |
|
Lattice (A) |
a=5.653 |
|
Structure |
M3 |
|
Melting Point |
1238℃ |
|
Density(g/cm3) |
5.31 g/cm3 |
|
Doped Material |
Si-doped / Zn-doped/ Undoped |
|
Type |
N-type/P-type/ Semi-insulating |
|
Carrier Concentration (cm-3) |
5 x 1017 |
|
EPD (Average) |
<5 x 105/cm2 |
Gallium Arsenide Crystal Specifications
|
Size |
25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm |
|
Thickness |
350um |
|
Polished |
SSP or DSP |
|
Orientation |
<100>,<110>, <111> |
|
Redirection Precision |
±0.5° |
|
Angle of Crystalline |
Special size and orientation are available on demand. |
|
Surface Roughness (Ra:) |
<5Å |
Gallium Arsenide Crystal Package
Packaged with class 100 clean bag in a class 1000 clean room.
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