Gallium Arsenide Crystal
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate commonly applied in the filed of light emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistor and heterojunction bipolar transistor.
Gallium Arsenide Crystal Physical Properties
|
Material |
GaAs |
|
Growth Method |
VGF |
|
Lattice (A) |
a=5.653 |
|
Structure |
M3 |
|
Melting point |
1238℃ |
|
Density(g/cm3) |
5.31 g/cm3 |
|
Doped Material |
Si-doped / Zn-doped/ undoped |
|
Type |
N-type/P-type/ Semi-insulating |
|
Carrier concentration (cm-3) |
5 x 1017 |
|
EPD (Average) |
<5 x 105/cm2 |
Gallium Arsenide Crystal Specification
|
Size |
25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm |
|
Thickness |
350um |
|
Polished |
SSP or DSP |
|
Orientation |
<100>,<110>, <111> |
|
Redirection precision |
±0.5° |
|
Angle of crystalline |
Special size and orientation are avaiable for request |
|
Surface roughness (Ra:) |
<5Å |
Gallium Arsenide Crystal Package
100 clean bag, 1000 exactly clean room
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