Gallium Arsenide Crystal (GaAs)
Gallium Arsenide Crystal
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors.
Gallium Arsenide Crystal Physical Properties
| Material | GaAs |
|---|---|
| Growth Method | VGF |
| Lattice (A) | a=5.653 |
| Structure | M3 |
| Melting Point | 1238℃ |
| Density(g/cm3) | 5.31 g/cm3 |
| Doped Material | Si-doped / Zn-doped/ Undoped |
| Type | N-type/P-type/ Semi-insulating |
| Carrier Concentration (cm-3) | 5 x 1017 |
| EPD (Average) | <5 x 105/cm2 |
Gallium Arsenide Crystal Specifications
| Size | 25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm |
|---|---|
| Thickness | 350um |
| Polished | SSP or DSP |
| Orientation | <100>,<110>, <111> |
| Redirection Precision | ±0.5° |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Surface Roughness (Ra:) | <5Å |
Gallium Arsenide Crystal Package
Packaged with class 100 clean bag in a class 1000 clean room.
Related Products of Gallium Arsenide Crystal
|
Semiconductor Crystals |
Scintillation Crystals |
Photoelectric Crystals |
|
Infrared Crystals |
Laser Crystals |
Nonlinear Optical Crystals |
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