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AEM Deposition

Indium(III) Selenide Evaporation Material (In2Se3)

Indium(III) Selenide Evaporation Material (In2Se3)
Indium(III) Selenide Evaporation Material (In2Se3)
Material Type Indium(III) Selenide
Symbol In2Se3
Melting Point (°C) 890
Theoretical Density (g/cc) 5.8
Z Ratio  
E-Beam Crucible Liner Material  
Temp. (°C) for Given Vap. Press. (Torr)



Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, there are five known forms (α, β, γ, δ, κ). The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV. The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques.

Material Notes

AEM Deposition provides Indium(III) selenide pellets, Indium(III) selenide pieces, and Indium(III) selenide powder for sale, purity is 99.99%, 99.999%.

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