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Indium Zinc Oxide Sputtering Targets (IZO)

Indium Zinc Oxide Sputtering Targets (IZO)
Material Type Indium Zinc Oxide
Symbol In2O3/ZnO 90/10 wt %, IZO
Melting Point (°C) 1,900 - 1,920
Sputter RF, DC
Max Power Density*
(Watts/Square Inch)
20
Type of Bond Indium, Elastomer

General

 
The IZO alloy target (99.99% in purity and density) is composed of 90 wt.% of ln2O3 and 10 wt.% of ZnO. The direct current (dc) magnetron sputtering system was employed for the film deposition.  The electrical, optical, and structural properties of these prepared films by different dc powers, such as 50 W, 80 W and 100 W, without/with the ion-assisted deposition (IAD) technique. An optimum IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. 
 

Material Notes

Indium Zinc Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
 


Other Information of Indium Zinc Oxide Sputtering Targets

Applications
 Transparent conductive film

• Physical vapor deposition

• Chemical vapor deposition
Features
• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Hot pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options
99.9% Minimum Purity

• Planar, rotary shape avialible

• Crystal Particle Size: 8~10µm

 
 
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