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Carbon Sputtering Targets (C)

Carbon Sputtering Targets (C)
Material Type Carbon
Symbol C
Atomic Weight 12.0107
Atomic Number 6
Color/Appearance Black, Non-Metallic
Thermal Conductivity 140 W/m.K
Melting Point (°C) ~3,652
Coefficient of Thermal Expansion 7.1 x 10-6/K
Theoretical Density (g/cc) 2.25
Z Ratio 3.26
Sputter PDC
Max Power Density*
(Watts/Square Inch)
80
Type of Bond Indium, Elastomer
Comments E-beam preferred. Arc evaporation. Poor film adhesion.

General

Carbon (from Latin: carbo "coal") is a chemical element with symbol C and atomic number 6. It is nonmetallic and tetravalent—making four electrons available to form covalent chemical bonds. Three isotopes occur naturally, 12C and 13C being stable, while 14C is a radioactive isotope, decaying with a half-life of about 5,730 years. The atoms of carbon can bond together in different ways, termed allotropes of carbon. The best known are graphite, diamond, and amorphous carbon. The physical properties of carbon vary widely with the allotropic form.

Material Notes

Carbon Sputtering Targets, Purity is 99.999%;
Circular: Diameter <= 14inch, Thickness >= 1mm;
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
 


Other Information of Carbon Sputtering Targets

Applications
Electronics
• Semiconductor
• Flat panel displays
Features
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade

Manufacturing Process
Refining
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment
Options
99.999% minimum purity
Carbide targets
Boron Carbide, Hafnium Carbide, Molybdenum Carbide, Niobium Carbide, Silicon Carbide, Tantalum Carbide, Titanium Carbide, Tungsten Carbide, Vanadium Carbide, Zirconium Carbide Sputtering Targets

• Sputtering target bonding service
 
 
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