Thin Film Substrate
Silicon Carbide Sputtering Targets (SiC)
|Material Type||Silicon Carbide|
|Melting Point (°C)||~2,700|
|Theoretical Density (g/cc)||3.22|
Max Power Density*
|Type of Bond||Indium, Elastomer|
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
Silicon Carbide Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
Other Information of Silicon Carbide Sputtering Targets
• Cleaning and final packaging, Cleaned for use in vacuum,
• Up to 12'' Diameter Targets Available
• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations