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Boron Carbide Sputtering Targets (B4C)

Boron Carbide Sputtering Targets (B4C)
Material Type Boron Carbide
Symbol B4C
Melting Point (°C) 2,350
Theoretical Density (g/cc) 2.37
Z Ratio **1.00
Sputter RF
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer
Comments Similar to chromium.


Boron carbide (chemical formula approximately B4C) is an extremely hard boron–carbon ceramic, and covalent material used in tank armor, bulletproof vests, engine sabotage powders,as well as numerous industrial applications. With a Vickers Hardness of >30 GPa, it is one of the hardest known materials, behind cubic boron nitride and diamond. The use of high density boron and boron carbide (B4C) and a vacuum-brazed target design was required to achieve the required sputter process stability and resistance to the thermal stress created by high rate sputtering.

Material Notes

Boron Carbide Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Indium bonding is recommended for this material, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity. This material has a low thermal conductivity are susceptible to thermal shock. 


Other Information of Boron Carbide Sputtering Targets

  PVD and CVD display
• Semiconductor

• Optical

• High purity
• Custom Sizes Available


Manufacturing Process
• Manufacturing - Hot pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

• 99% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations



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