86-0731-89578196 [email protected]
AEM Deposition

Silicon Sputtering Targets (Si)

Silicon Sputtering Targets (Si)
Silicon Sputtering Targets (Si)Silicon Sputtering Targets (Si)
Material Type Silicon
Symbol Si
Atomic Weight 28.0855
Atomic Number 14
Color/Appearance Dark Gray with a Bluish Tinge, Semi-Metallic
Thermal Conductivity 150 W/m.K
Melting Point (°C) 1,410
Bulk Resistivity >1 OHM-CM, 0.005-0.020 OHM-CM, <0.1 OHM-CM
Coefficient of Thermal Expansion 2.6 x 10-6/K
Theoretical Density (g/cc) 2.32
Dopant Undoped, Boron, Phosphorous, Arsenic, or Antimony
Z Ratio 0.712
Sputter RF
Max Power Density*
(Watts/Square Inch)
Type of Bond Indium, Elastomer
Comments Alloys with W; use heavy W boat. SiO produced.


Silicon is a solid at room temperature, with a melting point of 1,414 °C (2,577 °F) and a boiling point of 3,265 °C (5,909 °F). Like water, it has a greater density in a liquid state than in a solid state and it expands when it freezes, unlike most other substances. With a relatively high thermal conductivity of 149 W•m-1•K-1, silicon conducts heat well. Silicon sputtering target mainly used in in reactive magnetron sputtering to deposit dielectric layers such as SiO2 and SiN. As an important functional film material, they have good hardness, optical, dielectric properties and wear resistance. The corrosion resistance of Si targets have broad application prospects in optical and microelectronics fields, and are currently widely used as functional materials in the world. Currently, it mainly used for LCD transparent conductive glass, architectural LOW-E glass and microelectronics industry. The silicon sputtering targets can be divided into two types: single crystal and polycrystalline. We produce planar silicon sputtering targets through Czochralski crystal growth method. 

Material Notes

Purity: 99.99%, 99.999%
Relative Density: ≥ 95%
Conductivity type: P-type & N-type
Circular: Diameter <= 14inch, Thickness >= 1mm
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm

Targets Type: Planar sputtering target, Rotary sputtering target

Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.

Other Information of Silicon Sputtering Targets

Optical and decoration coating
• Semiconductor and thin film solar energy
• Flat panel displays
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade

Manufacturing Process
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment
99.99% minimum purity
• Semiconductor grade silicon alloys available
  Al/Si, Al/Cu/Si
• Smaller sizes also available for R&D applications
• Sputtering target bonding service

Click for a downloadable datasheet on the Silicon Sputtering Targets (Si)
Can't find the downloadable datasheet you need? Click here to send email to get it.
Click here for answers to some of the most common questions we get asked.