Silicon Sputtering Targets (Si)

Silicon is a solid at room temperature, with a melting point of 1,414 °C (2,577 °F) and a boiling point of 3,265 °C (5,909 °F). Like water, it has a greater density in a liquid state than in a solid-state, and it expands when it freezes, unlike most other substances. With a relatively high thermal conductivity of 149 Wm-1K-1, silicon conducts heat well. Silicon sputtering targets are mainly used in reactive magnetron sputtering to deposit dielectric layers, such as SiO2 and SiN. As an essential functional film material, they have good hardness, optical, dielectric properties, and wear resistance. Si targets' corrosion resistance has broad application prospects in optical and microelectronics fields and is currently widely used as functional materials globally. Now, it is mainly used for LCD transparent conductive glass, architectural LOW-E glass, and the microelectronics industry. The silicon sputtering targets can be divided into two types: single crystal and polycrystalline. We produce planar silicon sputtering targets through the Czochralski crystal growth method.