Silicon Nitride Sputtering Targets (Si3N4)
Material Type | Silicon Nitride |
Symbol | Si3N4 |
Color/Appearance | White to Gray or Dark Gray to Black, Crystalline Solid |
Melting Point (°C) | 1,900 |
Theoretical Density (g/cc) | 3.44 |
Z Ratio | **1.00 |
Sputter | RF, RF-R |
Max Power Density* (Watts/Square Inch) |
20 |
Type of Bond | Indium, Elastomer |
Silicon Nitride Sputtering Targets
Silicon Nitride Sputtering Targets Information
Silicon Nitride Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Silicon Nitride Sputtering Targets
Applications• Chemical Vapor Deposition (CVD)• Physical Vapor Deposition (PVD) • Semiconductor • Optical |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.5% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
|
Related Products of Silicon Nitride Sputtering Targets
|
Ceramic Sputtering Targets Silicon Dioxide Sputtering Target |
|
Evaporation Materials Silicon Evaporation Pellet |
Crucibles Quartz Crucible |
Metal Powders N/A |