Titanium Sputtering Targets (Ti)
| Material Type | Titanium |
| Symbol | Ti |
| Atomic Weight | 47.867 |
| Atomic Number | 22 |
| Color/Appearance | Silvery Metallic |
| Thermal Conductivity | 21.9 W/m.K |
| Melting Point (°C) | 1,660 |
| Coefficient of Thermal Expansion | 8.6 x 10-6/K |
| Theoretical Density (g/cc) | 4.5 |
| Z Ratio | 0.628 |
| Sputter | DC |
|
Max Power Density* (Watts/Square Inch) |
50 |
| Type of Bond | Indium, Elastomer |
| Comments | Alloys with W/Ta/Mo; evolves gas on first heating. |
General
Titanium is a strong metal with low density that is quite ductile (especially in an oxygen-freeenvironment). The relatively high melting point (more than 1,650℃ or 3,000℉ ) makes it useful as a refractory metal. It is paramagnetic and has fairly low electrical and thermal conductive. Titanium sputtering targets are common used in hardware tool coating, decorative coating, semicondutor components and Flat display coating. It is one of the core materials for preparing integrated circuits, and the purity usually require over 99.99%. AEM also can provide Titanium alloy targets such as tungsten titanium (W/Ti 90/10 wt%) sputtering target, which is an improtant material for semiconductor and solar industry. The density of W/Ti sputtering target we can reach over 14.24 g/cm3, and the purity can reach to 99.995%.
Material Notes
Purity: 99.9-99.999%
Circular: Diameter <= 14inch, Thickness >= 1mm
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm
Targets Type: Planar sputtering target, Rotary sputtering target
Analysis of Titanium Sputtering Targets
AEM Deposition manufacture titanium sputtering targets with high purity, the highest purity can reach to 99.999%. The analytical methods we use includes:
1. Metallic elements were analyzed using ICP-OES.
2. Gas elements were analyzed using LECO.
Other Information of Titanium Sputtering Targets
|
Applications • Decorative coating • Hardware tool coating • Semiconductor • Flat panel displays |
Features • Competitive pricing • High purity • Grain refined, engineered microstructure (Average grain size < 20 um) • Semiconductor grade |
|
Manufacturing Process • Melting (EB-Electron Beam Melting) • Analysis • Casting & Grain refinement Forging, Rolling, Annealing, Micrography, Machining • Cleaning and final packaging - Cleaned for use in vacuum Protection from environmental contaminants Protection during shipment |
Options • 99.5% minimum purity • Semiconductor grade titanium alloys available Ti/Al, W/Ti 90/10 wt%) • Smaller sizes also available for R&D applications • Sputtering target bonding service |
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