Titanium Sputtering Targets (Ti)
| Material Type | Titanium |
| Symbol | Ti |
| Atomic Weight | 47.867 |
| Atomic Number | 22 |
| Color/Appearance | Silvery Metallic |
| Thermal Conductivity | 21.9 W/m.K |
| Melting Point (°C) | 1,660 |
| Coefficient of Thermal Expansion | 8.6 x 10-6/K |
| Theoretical Density (g/cc) | 4.5 |
| Z Ratio | 0.628 |
| Sputter | DC |
|
Max Power Density* (Watts/Square Inch) |
50 |
| Type of Bond | Indium, Elastomer |
| Comments | Alloys with W/Ta/Mo; evolves gas on first heating. |
Titanium Sputtering Targets
Titanium is a strong metal with low density that is quite ductile (especially in an oxygen-free environment). The relatively high melting point (more than 1,650℃ or 3,000℉ ) makes it useful as a refractory metal. It is paramagnetic and has relatively low electrical and thermal conductivity. Titanium Sputtering Targets are commonly used in hardware tool coating, decorative coating, semiconductor components, and flat display coating. It is one of the core materials for preparing integrated circuits, and purity usually requires over 99.99%. AEM offers Titanium alloy targets such as Tungsten Titanium (W/Ti 90/10 wt%) Sputtering Target, an essential material for the semiconductor and solar industry. The W/Ti sputtering target density can reach over 14.24 g/cm3, and the purity can reach 99.995%.
Titanium Sputtering Targets Information
Titanium Sputtering Targets
Purity: 99.9-99.999%
Circular: Diameter <= 14 inch, Thickness >= 1mm
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm
Targets Type: Planar sputtering target, Rotary sputtering target
Titanium Sputtering Targets Analysis
AEM Deposition manufacture Titanium Sputtering Targets with high purity. The highest purity can reach to 99.999%. The analytical methods we use includes:
1. Metallic elements analyze using ICP-OES.
2. Gas elements analyze using LECO.
More Information on Titanium Sputtering Targets
Applications• Decorative coating• Hardware tool coating • Semiconductor • Flat panel displays |
Features• Competitive pricing• High purity • Grain refined, Engineered microstructure (average grain size < 20 um) • Semiconductor grade |
Manufacturing Process• Melting (EB-Electron Beam Melting)• Analysis • Casting & Grain refinement Forging, Rolling, Annealing, Micrography, Machining • Cleaning and final packaging - Cleaned for use in vacuum Protection from environmental contaminants Protection during shipment |
Options• 99.9% minimum purity• Semiconductor grade titanium alloys available Ti/Al, W/Ti 90/10 wt%) • Smaller sizes also available for R&D applications • Sputtering target bonding service |
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