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Titanium Boride Sputtering Targets (TiB2)

Titanium Boride Sputtering Targets (TiB2)
Material Type Titanium Boride
Symbol TiB2
Melting Point (°C) 2,900
Theoretical Density (g/cc) 4.5
Z Ratio 1.00
Sputter RF
Max Power Density
(Watts/Square Inch)
20
Type of Bond Indium, Elastomer

General

TiB2 is an extremely hard ceramic which has excellent heat conductivity, oxidation stability and resistance to mechanical erosion. TiB2 is also a reasonable electrical conductor, so it can be used as a cathode material in aluminium smelting and can be shaped by electrical discharge machiningTiB2 is very similar to titanium carbide, an important base material for cermets, and many of its properties (e.g. hardnessthermal conductivityelectrical conductivity and oxidation resistance) are superior to those of TiC.

Material Notes

Titanium Boride Sputtering Target, Purity is 99.5%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.
 



Other Information of Titanium Boride Sputtering Targets

Applications
  PVD and CVD display
• Semiconductor

• Optical

Features
• High purity
• Custom Sizes Available

Manufacturing Process
• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options
• 99.9% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations

 
 
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