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AEM Deposition

Titanium Boride Sputtering Targets (TiB2)

Titanium Boride Sputtering Targets (TiB2)
Titanium Boride Sputtering Targets (TiB2)
Material Type Titanium Boride
Symbol TiB2
Melting Point (°C) 2,900
Theoretical Density (g/cc) 4.5
Z Ratio 1.00
Sputter RF
Max Power Density
(Watts/Square Inch)
20
Type of Bond Indium, Elastomer

Titanium Boride Sputtering Target

TiB2 is an extremely hard ceramic which has excellent heat conductivity, oxidation stability and resistance to mechanical erosion. TiB2 is also a reasonable electrical conductor, so it can be used as a cathode material in aluminium smelting and can be shaped by electrical discharge machining. TiB2 is very similar to titanium carbide, an important base material for cermets, and many of its properties (e.g. hardness, thermal conductivity, electrical conductivity and oxidation resistance) are superior to those of TiC.

Titanium Boride Sputtering Target Information

Titanium Boride Sputtering Target
Purity is 99.5%; 
Circular: Diameter <= 14inch, Thickness >= 1mm;
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

Other Information of Titanium Boride Sputtering Target

Applications

•  PVD and CVD display
• Semiconductor

• Optical

Features

• High purity
• Custom Sizes Available

Manufacturing Process

• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options

• 99.9% Minimum Purity

• Up to 12'' Diameter Targets Available

• Planar Tiles Up to 8'' X 5'' for Larger Target Configurations


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