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Tungsten Telluride Sputtering Targets (WTe2)

Tungsten Telluride Sputtering Targets (WTe2)
Material Type Tungsten Telluride
Symbol WTe2
Color/Appearance Dark Grey, Solid
Melting Point (°C) 1,020
Theoretical Density (g/cc) 9.43
Water Solubility Insoluble
Sputter RF, RF-R, DC
Type of Bond Indium, Elastomer
Comments  

General

Tungsten(IV) telluride (WTe2) is an inorganic semimetallic chemical compound. The resistance is proportional to the square of the magnetic field. This may be due to the material being the first example of a compensated semimetal, in which the number of mobile holes is the same as the number of electrons. The structure of tungsten ditelluride is layered, and the substance can be exfoliated into thin sheets down to monolayers. However electrons can easily move between the layers, unlike in other two dimensional semiconductors. The fraction of charge carriers is 0.005 per formula unit (WTe2).

Material Notes

Tungsten Telluride Sputtering Target, Purity is 99.8%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

 


Other Information of Tungsten Telluride Sputtering Targets

Applications
 Semiconductor
• Chemical vapor deposition (CVD)
• Physical vapor deposition (PVD) display

Features
Competitive pricing
• High purity
• Grain refined, engineered microstructure
• Semiconductor grade


Manufacturing Process
Refining
  Three-layer electrolytic process
• Melting and casting
  Electrical resistance furnace - Semi-continuous casting
• Grain refinement
  Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
  Protection from environmental contaminants
  Protection during shipment

Options
99.999% minimum purity
• Planar circular targets up to 18'' (457mm) diameter
• Planar tiles up to 48'' (1200mm) X 15.75'' (400mm) for larger target configurations
• Smaller sizes also available for R&D applications
• Sputtering target bonding service

 

 

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