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Sputtering Targets
| Application Field | Materials | Manufacturing Method | Purpose of Use |
| Electrode Materials | W (5N) | Powder sintering | Gate area |
| Co(5N) | Melting method | Gate area | |
| Ni(5N) | Melting method | Gate area | |
| Ti(5N) | Melting method | Lynear, Barrier etc. | |
| Various silicide(4N up) | Powder sintering | ||
| Wiring Materials | Al(5N, 5N5) & Al alloy such as AlCu(5N, 5N5) | Vacuum melting method | Inter conect |
| Cu(6N) | Melting method | Inter conect | |
| Compound Semiconductor Materials | Au, Au alloy(4N) | Melting method | Wiring |
| WSi(5N) | Powder sintering | Electrode | |
| SiO2(4N,6N) | Artificial/ natural quartz | Insulating material | |
| Mounting & Wiring | Al(5N, 5N5)& Al alloy(5N, 5N5) | Vacuum melting method | Wiring |
| Cu(4N) | Melting method | Wiring | |
| Cr(3N) | Powder sintering | Barriers | |
| Precious metal materials | Melting method | Wiring | |
| TiW(4N up) | Powder sintering | Barriers | |
| Ni(4N) | Melting method | Barriers | |
| Capacitor Materials | BST | Powder sintering | DRAM/thin film capacitors |
| PZT | Powder sintering | FeRAM | |
| Barrier Materials | Ti(4N5) | Melting method | |
| TiW(4N up) | Powder sintering |
| Target Material | Al-0.5mass%Cu | Ti | Cu | Ta | W |
| Purity | 5N5up (Low-U, Th specifications) | 4N5up | 6Nup | 6Nup (Except for Nb and W) | 5N |
| Backing Plate Material | Aluminum or copper alloy | Aluminum alloy | Aluminum alloy | Aluminum or copper alloy |
Aluminum alloy or copper alloy |
| Bonding Method |
Electron beam welding, integrated part structure, or metal bonding |
Diffusion bonding | Diffusion bonding | Diffusion bonding | Metal bonding |