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  • Semiconductor Sputtering Targets

    Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes.

    - Low particle

    - Good film uniformity

    - High usage efficiency

    Features of Semiconductor Sputtering Targets

    - Low-particle targets

    - ULVAC has developed sputtering targets that suppress generation of particles that can be the source of problems in the sputtering process.

    - Gaseous elements are one factor in causing particle emissions especially in aluminum targets and we are working to lower emissions by utilizing a vacuum melting method in the refining and ingot purification processes.

    - Attaining high uniformity by adjusting the metal microstructure

    - ULVAC uses manufacturing processes that ensure high uniformity and a fine metal microstructure in most of its targets for semiconductor products including high purity cobalt targets and titanium targets.

    - Utilizing a fine metal microstructure having a high degree of uniformity for example allows uniform the magnetic flux leakage on the target surface of high purity cobalt targets.

    - Meticulous quality control system

    - Integrated process manufacturing at ULVAC takes product characteristics and contours into account during production. Sophisticated analysis/evaluation system such as the GD-MS (glow discharge mass spectrometer) ensure purity along with a high level of quality.

    Sputtering Targets for Semiconductors

    Application Field  Materials  Manufacturing Method  Purpose of Use 
    Electrode materials  W (5N) Powder sintering  Gate area
    Co(5N)  Melting method  Gate area
    Ni(5N)  Melting method  Gate area
    Ti(5N)  Melting method  Lynear, Barrier etc.
    Various silicide(4N up)  Powder sintering   
    Wiring Materials  Al(5N, 5N5) & Al alloy such as AlCu(5N, 5N5)  Vacuum melting method  Inter conect
    Cu(6N)  Melting method  Inter conect
    Compound semiconductor materials Au, Au alloy(4N)  Melting method  Wiring 
    WSi(5N)  Powder sintering  Electrode 
    SiO2(4N,6N)  Artificial/ natural quartz  Insulating material 
    Mounting & wiring  Al(5N, 5N5)& Al alloy(5N, 5N5) Vacuum melting method  Wiring 
    Cu(4N)  Melting method  Wiring 
    Cr(3N)  Powder sintering  Barriers 
    Precious metal materials  Melting method  Wiring 
    TiW(4N up)  Powder sintering  Barriers 
    Ni(4N)  Melting method  Barriers 
    Capacitor materials  BST Powder sintering  DRAM/thin film capacitors 
    PZT  Powder sintering  FeRAM 
    Barrier materials  Ti(4N5)  Melting method   
    TiW(4N up)  Powder sintering   

    Target Material for Mainstream 300mm Wafers

    Target Material Al-0.5mass%Cu Ti Cu Ta W
    Purity 5N5up (low-U, Th specifications) 4N5up 6Nup 6Nup (except for Nb and W) 5N
    Backing plate Material Aluminum or Copper Alloy Aluminum Alloy Aluminum Alloy Aluminum or Copper Alloy Aluminum alloy 
    or
    Copper Alloy
    Bonding Method Electron Beam Welding, Integrated
    Part Structure, or Metal Bonding
    Diffusion Bonding Diffusion Bonding Diffusion Bonding Metal Bonding

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