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AEM Deposition

Gallium Nitride (GaN)

Gallium Nitride (GaN)
Gallium Nitride (GaN)


Gallium Nitride (GaN) has high thermal conductivity and strong anti-irradiation. It is not only a short-wavelength optoelectronic material, but also a replacement material for high-temperature semiconductor devices. GaN substrates can be used for preparation green LEDs, blue-violet, ultraviolet LD, ultraviolet detectors and high-frequency high-power electronic devices.
Physical Properties
Material GaN
Conduction Type
< 0.5 Ω·cm
>106 Ω·cm
EPD (Average) Less than 5x106 cm-2
Useable Surface Area > 90%


Size 10.0 mm x 10.5 mm, 14.0 x 15.0 mm
Thickness 300um,350um, 400um ±25um
Polished Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Orientation C-axis(0001) ± 0.5°
TTV <15 um    
Bow <20 um    


100 clean bag, 1000 exactly clean room
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