86-0731-89578196 [email protected]
AEM Deposition

Gallium Nitride (GaN)

Gallium Nitride (GaN)
Gallium Nitride (GaN)

Introduction:

Gallium Nitride (GaN) has high thermal conductivity and strong anti-irradiation. It is not only a short-wavelength optoelectronic material, but also a replacement material for high-temperature semiconductor devices. GaN substrates can be used for preparation green LEDs, blue-violet, ultraviolet LD, ultraviolet detectors and high-frequency high-power electronic devices.
Physical Properties
Material GaN
Conduction Type
N-Type
Semi-Insulating
Resistivity(300K)
< 0.5 Ω·cm
>106 Ω·cm
EPD (Average) Less than 5x106 cm-2
Useable Surface Area > 90%

Specification

Size 10.0 mm x 10.5 mm, 14.0 x 15.0 mm
Thickness 300um,350um, 400um ±25um
Polished Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Orientation C-axis(0001) ± 0.5°
TTV <15 um    
Bow <20 um    

Package

100 clean bag, 1000 exactly clean room
Click for a downloadable datasheet on the Gallium Nitride (GaN)
Can't find the downloadable datasheet you need? Click here to send email to get it.
Click here for answers to some of the most common questions we get asked.

Related Products