Thin Film Substrate
Gallium Nitride (GaN)
Introduction:Gallium Nitride (GaN) has high thermal conductivity and strong anti-irradiation. It is not only a short-wavelength optoelectronic material, but also a replacement material for high-temperature semiconductor devices. GaN substrates can be used for preparation green LEDs, blue-violet, ultraviolet LD, ultraviolet detectors and high-frequency high-power electronic devices.
< 0.5 Ω·cm
|EPD (Average)||Less than 5x106 cm-2|
|Useable Surface Area||> 90%|
|Size||10.0 mm x 10.5 mm, 14.0 x 15.0 mm|
|Thickness||300um,350um, 400um ±25um|
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
|Orientation||C-axis(0001) ± 0.5°|
Package100 clean bag, 1000 exactly clean room
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