Gallium Nitride Wafer (GaN)
Gallium Nitride Wafer
Gallium Nitride (GaN) has high thermal conductivity and strong anti-irradiation. It is not only a short-wavelength optoelectronic material but also a replacement material for high-temperature semiconductor devices. GaN substrates can be used to prepare green LEDs, blue-violet, ultraviolet LD, ultraviolet detectors, and high-frequency high-power electronic devices.
Gallium Nitride Wafer Physical Properties
| Material | GaN | |
|---|---|---|
| Conduction Type |
N-Type UID Semi-Insulating
|
|
| Resistivity(300K) |
< 0.02 Ω·cm < 0.2 Ω·cm >1E8 Ω·cm
|
|
| EPD (Average) | Less than 5x106 cm-2 | |
| Useable Surface Area | > 90% | |
| Grade | Production, Research, Dummy | |
Gallium Nitride Wafer Specifications
| Size | 10.0 mm x 10.5 mm, 14.0 x 15.0 mm, 2" Dia, 4“ Dia |
|---|---|
| Thickness | 400um ±30um/450±30um |
| Polished |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
| Orientation | C-axis(0001) ± 0.5° |
| TTV | <15 um |
| Bow | <20 um |
Applications
Various LED's, Laser diodes: blue LD, Power electronic devices, High frequency electronic devices.Gallium Nitride Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Gallium Nitride Wafer
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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