Thin Film Substrate
Zinc Oxide (ZnO)
Introduction:Zinc Oxide (ZnO) is an excellent GaN film substrate material. The bandgap is in the 3.73eV with 60mev exciton binding energy at room temperature which makes it can an ultraviolet and visible light luminescent material. It's widely used in opto-electronics, UV devicest as well as high temperature and energy electronic devices.
|Lattice (A)||a=3.252, c=5.313|
|Direction||<0001> 3.5 º|
|Thermal expansion coefficient (CTE)||6.5 x 10^-6 /℃ along a axis 3.7 x 10^-6 /℃along c axis|
|Seebeck coefficient||1200 uV/K @ 300 ℃|
|Thermal conductivity||0.006 Cal/cm/K|
|Optical transmission||> 50% for 2mm thickness (wavelength 400nm ~ 600nm)|
|Size||25x25x0.5 mm, 10x10x0.5mm, 10x5x0.5 mm,5x5x0.5mm|
|Polished||SSP or DSP|
|Redirection the edge||2°（special in 1°）|
|Angle of crystalline||Special size and orientation are avaiable for request|
Package100 clean bag, 1000 exactly clean room
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