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Zinc Oxide (ZnO)

Zinc Oxide (ZnO)

Introduction:

Zinc Oxide (ZnO) is an excellent GaN film substrate material. The bandgap is in the 3.73eV with 60mev exciton binding energy at room temperature which makes it can an ultraviolet and visible light luminescent material. It's widely used in opto-electronics, UV devicest as well as high temperature and energy electronic devices.

Physical Properties

Material ZnO
Growth method MOCVD
Crystal Structure Hexagonal
Lattice (A) a=3.252, c=5.313
Direction <0001> 3.5 º
Density(g/cm3) 5.7 g/cm3
Hardness 4.0 (Mohns)
Melting point 1975℃
Thermal expansion coefficient (CTE) 6.5 x 10^-6 /℃ along a axis     3.7 x 10^-6 /℃along c axis
Seebeck coefficient 1200 uV/K @ 300 ℃
Thermal conductivity 0.006 Cal/cm/K
Optical transmission > 50% for 2mm thickness (wavelength 400nm ~ 600nm)

Specification

Size 25x25x0.5 mm, 10x10x0.5mm, 10x5x0.5 mm,5x5x0.5mm
Thickness 0.5 mm
Crystal Orientation <0001>、<11-20>、<10-10>
Polished SSP or DSP
Redirection precision ±0.5°
Redirection the edge 2°(special in 1°)
Angle of crystalline Special size and orientation are avaiable for request
Ra: ≤5Å(5µm×5µm)

Package

100 clean bag, 1000 exactly clean room
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