Aluminum Nitride Ceramic Substrate
Aluminum Nitride (AlN) ceramic substrate has good thermal conductivity, electrical properties, strength, and high-temperature resistance. The AlN substrate with the properties of chemical corrosion resistance, high electrical resistivity, low dielectric loss, non-toxicity, is an excellent substitute material for BeO ceramics. It is mainly used in high-density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductor refrigeration, and other products for high-performance substrate materials and packaging materials.
Aluminum Nitride Ceramic Substrate Physical Properties
Material |
AlN |
Density(g/cm3) |
3.335 g/cm3 |
Hardness |
9.2(Mohns) |
Thermal Conductivity (W/m. K) |
≥170 |
Thermal Expansion (x10-6/oC) |
2.805×10-6 |
Dielectric Constant (at 1MHZ) |
8.56 |
Flexural Strength (N/mm2) |
382.7 |
Aluminum Nitride Ceramic Substrate Specifications
Size |
100 x 100 x 1.0 mm
(customized size are available) |
Polish |
SSP or DSP |
Ra: |
≤10 nm (polished) |
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