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AEM Deposition

GaSb Substrate

GaSb Substrate
GaSb Substrate


Gallium antimonide (GaSb) is a important semiconductor material of III-V element family.  It's also the key material to uncooled medium-long-wave infrared detectors and focal plane arrays. The infrared detectors is long life, high sensitivity and reliability. It's widely used in infrared Laser, infrared detector, infrared sensor, thermal photovoltaic cell.

Physical Properties

Material GaSb
Growth Method LEC, VGF, VBG
Lattice (A) a=6.094
Structure M3
Melting point 712℃
Density(g/cm3) 5.53 g/cm3
Doped Material undoped  Te-doped Zn-doped
Type P P N
Carrier concentration (cm-3) (1-2) x 1017 (5-100) x 1017 (1-20) x 1018
Mobility (cm2v-1s-1) 600-700 200-500 2000-350
EPD (Average) <2000/cm2 <2000/cm2 ≤2000 /≤500/cm2


Size 10mm x 10 mm, 10 mm x 5 mm,2'' Dia, 3'' Dia (customized size avalible)
Thickness 500um, 600um, 800um (Tolerance: ±25um)
Polished SSP or DSP
Orientation <100>, <111>
Redirection precision ±0.5°
Primary Flat Length 16±2 mm, 22±2 mm, 32.5±2 mm
Scondary Flat Length  8±1 mm, 11±1 mm, 18±1 mm
TTV <10 um, <20 um
Bow <10 um, <20 um
Warp <15 um, <20 um 


100 clean bag, 1000 exactly clean room
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