Thermal Oxide Silicon Wafers (Si+SiO2)

Thermal oxide (Si+SiO2) or silicon dioxide layer is formed on a bare silicon wafer surface at elevated temperature in an oxidant's presence through the thermal oxidation process. It is usually grown in a horizontal tube furnace with a temperature range from 900°C ~ 1200°C, using either a "Wet" or "Dry" growth method.

 

Thermal oxide is a kind of "grown" oxide layer. Compared to the CVD deposited oxide layer, it is an excellent dielectric layer as an insulator with higher uniformity and higher dielectric strength. For most silicon-based devices, the thermal oxide layer is a significant material for pacifying the silicon surface to act as doping barriers and surface dielectrics.

 

AEM provides thermal oxide wafers in diameter from 1" to 12" with prime grade and defect-free silicon wafers as substrate for growing high uniformity and excellent quality thermal oxide layer to meet customers' specifications.