High Purity Materials
Thin Film Substrates
Home > Thin Film Substrates > Semiconductor Substrates > Thermal Oxide Silicon Wafers (Si+SiO2)
Thermal Oxide Silicon Wafers (Si+SiO2)
Thermal Oxide Silicon Wafer
Thermal oxide (Si+SiO2) or silicon dioxide layer is formed on a bare silicon wafer surface at elevated temperature in an oxidant's presence through the thermal oxidation process. It is usually grown in a horizontal tube furnace with a temperature range from 900°C ~ 1200°C, using either a "Wet" or "Dry" growth method.
Thermal oxide is a kind of "grown" oxide layer. Compared to the CVD deposited oxide layer, it is an excellent dielectric layer as an insulator with higher uniformity and higher dielectric strength. For most silicon-based devices, the thermal oxide layer is a significant material for pacifying the silicon surface to act as doping barriers and surface dielectrics.
AEM provides thermal oxide wafers in diameter from 1" to 12" with prime grade and defect-free silicon wafers as substrate for growing high uniformity and excellent quality thermal oxide layer to meet customers' specifications.
Thermal Oxide Silicon Wafer Physical Properties
|Resistivity||>1000 Ωcm||10-3 ~40 Ωcm||0.05~0.1 Ωcm|
|Oxide Thickness||300~ 500nm (customized sizes are available.|
Thermal Oxide Silicon Wafer Specifications
|Size||10x10, 15x15, 20x 15, 20x 20 (customized sizes are available)|
|Dia 1'', Dia 2'',Dia 3'', Dia 4'', Dia 5'' Dia 6'', Dia 8''. Dia12''|
|Thickness||0.3- 0.5mm, 1.0mm|
|Polished||SSP or DSP|
|Redirection the Edge||2°（special in 1°）|
Thermal Oxide Silicon Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Thermal Oxide Silicon Wafer
Magnetic Ferroelectricity Substrates
GaN Thin Film Substrates
Click to download datasheet about Thermal Oxide Silicon Wafers (Si+SiO2)
Unable to find the required data sheet? Click here to send an email and get it.
Click here to get answers to Frequently Asked Questions (FAQ).