Strontium Lanthanum Aluminate (LaSrAlO₄) Substrate

Strontium Lanthanum Aluminate Substrate
Strontium Lanthanum Aluminate (LaSrAlO4) single crystal substrates are growing for the Czochralski method. It has no phase transition from melting temperature to a lower temperature. LaSrO4 crystal has the same structure as YBCO crystal, but It has a lower thermal expansion and expansion coefficient than other perovskite structures. So it can be used to produce films at a lower temperature to improve lattice mismatch and reduce stress.
Strontium Lanthanum Aluminate Substrate Physical Properties
| Material | LaSrAlO4 |
|---|---|
| Structure | M4 |
| Lattice (A) | a=3.756, c=12.63 |
| Growth Method | Czochralski |
| Melting Point | 1650℃ |
| Density(g/cm3) | 5.92g/cm3 |
| Hardness | 6-6.5 (Mohns) |
| Permittivity | ε = 16.8 |
Strontium Lanthanum Aluminate Substrate Specifications
| Size | 10x3, 10x5, 10x10, 15x15, 20x20,Dia 15 mm, Dia 20 mm, Dia 1'', Dia 2'' |
|---|---|
| Thickness | 0.5 mm, 1.0 mm |
| Polished | SSP or DSP |
| Orientation | <001> |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°(special in 1°) |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å(5µm×5µm) |
Strontium Lanthanum Aluminate Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Strontium Lanthanum Aluminate Substrate
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
FREE QUOTE
Click to download datasheet about Strontium Lanthanum Aluminate (LaSrAlO₄) Substrate
Unable to find the required data sheet? Click here to send an email and get it.
Click here to get answers to Frequently Asked Questions (FAQ).









