Strontium Lanthanum Aluminate Substrate (LaSrAlO4)
![Strontium Lanthanum Aluminate Substrate (LaSrAlO4)](/fup/190122/1-1Z12213540Y54.jpg)
![Strontium Lanthanum Aluminate Substrate (LaSrAlO4)](/fup/190122/1-1Z12213540Y54.jpg)
Strontium Lanthanum Aluminate Substrate
Strontium Lanthanum Aluminate (LaSrAlO4) single crystal substrates are growing for the Czochralski method. It has no phase transition from melting temperature to a lower temperature. LaSrO4 crystal has the same structure as YBCO crystal, but It has a lower thermal expansion and expansion coefficient than other perovskite structures. So it can be used to produce films at a lower temperature to improve lattice mismatch and reduce stress.
Strontium Lanthanum Aluminate Substrate Physical Properties
Material | LaSrAlO4 |
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Structure | M4 |
Lattice (A) | a=3.756, c=12.63 |
Growth Method | Czochralski |
Melting Point | 1650℃ |
Density(g/cm3) | 5.92g/cm3 |
Hardness | 6-6.5 (Mohns) |
Permittivity | ε = 16.8 |
Strontium Lanthanum Aluminate Substrate Specifications
Size | 10x3, 10x5, 10x10, 15x15, 20x20,Dia 15 mm, Dia 20 mm, Dia 1'', Dia 2'' |
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Thickness | 0.5 mm, 1.0 mm |
Polished | SSP or DSP |
Orientation | <001> |
Redirection Precision | ±0.5° |
Redirection the Edge | 2°(special in 1°) |
Angle of Crystalline | Special size and orientation are available on demand. |
Ra: | ≤5Å(5µm×5µm) |
Strontium Lanthanum Aluminate Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
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