Sapphire Wafer (Al2O3)
Sapphire Wafer
Sapphire (Al2O3) single crystal is an excellent multifunctional material. It is resistant to high temperature, has good heat conduction, high hardness, transparent to infrared, and stable chemical characters. It is widely used in many fields of industry, defense, and scientific research (such as a high-temperature infrared window).
It is also a widely used single-crystal substrate material, which is the preferred substrate for the current blue, violet, white light-emitting diode (LED), and blue laser (LD) industries (first need to extend the GaN film on the sapphire substrate). It is also an essential superconducting thin film substrate.
In addition to making high-temperature superconducting films such as Y-series and La-series, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting films.
It is also a widely used single-crystal substrate material, which is the preferred substrate for the current blue, violet, white light-emitting diode (LED), and blue laser (LD) industries (first need to extend the GaN film on the sapphire substrate). It is also an essential superconducting thin film substrate.
In addition to making high-temperature superconducting films such as Y-series and La-series, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting films.
Sapphire Wafer Physical Properties
| Material | Al2O3 | |||
|---|---|---|---|---|
| Crystal Structure | Hexagonal | |||
| Lattice (A) | a=4.758, c=12.992 | |||
| Crystal Purity | >99.99% | |||
| Density(g/cm3) | 3.98 g/cm3 | |||
| Melting Point | 2040℃ | |||
| Hardness | 9.0 (Mohns) | |||
| Thermal Expansion | 7.5 (x 10-6/℃) | |||
| Thermal Conductivity | 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) | |||
| Dielectric Constants | 9.4 @300K at A axis ~ 11.58@ 300K at C axis | |||
| Loss Tangent at 10 GHz | < 2x10-5 at A axis , <5 x10-5 at C axis | |||
Sapphire Wafer Specifications
| Size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20,Dia15, Dia 20, Dia 1'' |
|---|---|
| Thickness | 0.5 mm, 1.0 mm |
| Polished | SSP or DSP |
| Crystallographic D spacing | (1120 ) - a plane: 2.379 Å (1102) - r plane: 1.740 Å |
| (1010) - m plane: 1.375 Š(1123) - n plane: 1.147 ů | |
| (0001) - c plane: 2.165 Å (1011) - s plane: 1.961 Å | |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°（special in 1°） |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å（5µm×5µm） |
Sapphire Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
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