Indium Arsenide Wafer (InAs)
Indium Arsenide Wafer
InAs single crystal can be used as a substrate material to produce InAsSb/InAsPSb materials to fabricate an infrared light-emitting device. It has good application prospects in the field of gas detection and low loss fiber communication. Besides, the InAs crystal is the ideal material to manufacture the Hall device because of its high electron mobility.
Indium Arsenide Wafer Physical Properties
Material | InAs | |||
---|---|---|---|---|
Growth Method | LEC | |||
Lattice (A) | a=6.058 | |||
Structure | M3 | |||
Melting Point | 942℃ | |||
Density(g/cm3) | 5.66 g/cm3 | |||
Doped Material | undoped | Sn-doped | S-doped | Zn-doped |
Type | N | N | N | P |
Carrier Concentration (cm-3) | 5 x 1016 | (5-20) x 1017 | (1-10) x 1017 | (1-10) x 1018 |
Mobility (cm2v-1s-1) | ≥ 2 x 104 | 7000-20000 | 6000-20000 | 100-400 |
EPD (Average) | <5 x 104/cm2 | <5 x 104/cm2 | <5 x 104/cm2 | <5 x 104/cm2 |
Indium Arsenide Wafer Specifications
Size | 2'' Dia, 3'' Dia, 4'' Dia (customized sizes are available) | ||
---|---|---|---|
Thickness | 500um, 600um, 800um (Tolerance: ±25um) | ||
Polished | SSP or DSP | ||
Orientation | <100>, <111> | ||
Redirection Precision | ±0.5° | ||
Primary Flat Length | 16±2 mm, 22±2 mm, 32.5±2 mm | ||
Scondary Flat Length | 8±1 mm, 11±1 mm, 18±1 mm | ||
TTV | <10 um | ||
Bow | <10 um | ||
Warp | <15 um |
Indium Arsenide Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Indium Arsenide Wafer
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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