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InAs substrate

InAs substrate

Introduction:

InAs single crystal can be used as a substrate material to grow InAsSb/InAsPSb materials to fabricate an infrared light-emitting device. It has good application prospects in the field of gas detection and low loss fiber communication. In addition, The InAs crystal is the ideal material to manufacture Hall device because of  high electron mobility.

Physical Properties

Material InAs
Growth Method LEC
Lattice (A) a=6.058
Structure M3
Melting point 942℃
Density(g/cm3) 5.66 g/cm3
Doped Material undoped  Sn-doped S-doped Zn-doped
Type N N N P
Carrier concentration (cm-3) 5 x 1016 (5-20) x 1017 (1-10) x 1017 (1-10) x 1018
Mobility (cm2v-1s-1) ≥ 2 x 104 7000-20000 6000-20000 100-400
EPD (Average) <5 x 104/cm2 <5 x 104/cm2 <5 x 104/cm2 <5 x 104/cm2

Specification

Size 2'' Dia, 3'' Dia, 4'' Dia (customized size avalible)
Thickness 500um, 600um, 800um (Tolerance: ±25um)
Polished SSP or DSP
Orientation <100>, <111>
Redirection precision ±0.5°
Primary Flat Length 16±2 mm, 22±2 mm, 32.5±2 mm
Scondary Flat Length  8±1 mm, 11±1 mm, 18±1 mm
TTV <10 um    
Bow <10 um    
Warp <15 um    

Package

100 clean bag, 1000 exactly clean room
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