LSAT Substrate (Lanthanum Strontium Aluminum Tantalum Oxide)
LSAT Substrate
Lanthanum Strontium Aluminum Tantalum Oxide (La, Sr)(Al, Ta)O3 (LAST) crystal has no phase transitions as the temperature changed. The crystal structure is similar to YBCO. It has a lower thermal expansion and expansion coefficient than other perovskite structures. So, the thin film can be deposited at a lower temperature to improve lattice mismatch and reduce stress.
LSAT Substrate Physical Properties
| Material | (La,Sr)(Al,Ta)O3 (LAST) |
|---|---|
| Structure | Cubic |
| Lattice (A) | a=3.868 |
| Growth Method | Czochralski |
| Hardness | 6.5 (Mohns) |
| Melting Point | 1840℃ |
| Density(g/cm3) | 6.74 g/cm3 |
| Thermal Expansion | 10 (x 10-6/℃) |
| Permittivity | ε = 22 |
| Color and Appearance | Colorless to light brown depending on the annealing. |
LSAT Substrate Specifications
| Size | 10x3, 10x5, 10x10, 15x15, 20x20,Dia 15, Dia 20 Dia 1'', Dia 2'' |
|---|---|
| Thickness | 0.5 mm, 1.0 mm |
| Polished | SSP or DSP |
| Orientation | <100>, <110>, <111> |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°（special in 1°） |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å（5µm×5µm） |
LSAT Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of LSAT Substrate
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Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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