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AEM Deposition

GaAs substrate

GaAs substrate
GaAs substrateGaAs substrate


Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate commonly applied in the filed of light emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistor and heterojunction bipolar transistor.

Physical Properties

Material GaAs
Growth Method VGF, VB
Lattice (A) a=5.653
Structure M3
Melting point 1238℃
Density(g/cm3) 5.31 g/cm3
Doped Material Si-doped / Zn-doped/ undoped
Type N-type/P-type/ Semi-insulating
Carrier concentration (cm-3) 5 x 1017
EPD (Average) <5 x 105/cm2


Size 25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm,2'' Dia, 3'' Dia, 4'' Dia (customized size avalible)
Thickness 350um, 650um (Tolerance: ±25um)
Polished SSP or DSP
Orientation <100>,<110>, <111>
Redirection precision ±0.5°
TTV <10 um    
Bow <20 um    
Warp <20 um    
Surface roughness (Ra:) <5Å


100 clean bag, 1000 exactly clean room
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