Gallium Arsenide Wafer (GaAs)






Gallium Arsenide Wafer
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors.
Gallium Arsenide Wafer Physical Properties
Material | GaAs |
---|---|
Growth Method | VGF, VB |
Lattice (A) | a=5.653 |
Structure | M3 |
Melting Point | 1238℃ |
Density(g/cm3) | 5.31 g/cm3 |
Doped Material | Si-doped / Zn-doped/ Undoped |
Type | N-type/P-type/ Semi-insulating |
Carrier Concentration (cm-3) | 5 x 1017 |
EPD (Average) | <5 x 105/cm2 |
Gallium Arsenide Wafer Specifications
Size | 25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm,2'' Dia, 3'' Dia, 4'' Dia, 6" Dia (customized sizes are available) | ||
---|---|---|---|
Thickness | 350um, 650um (Tolerance: ±25um) | ||
Polished | SSP or DSP | ||
Orientation | <100>,<110>, <111> | ||
Redirection Precision | ±0.5° | ||
TTV | <10 um | ||
Bow | <20 um | ||
Warp | <20 um | ||
Surface Roughness (Ra:) | <5Å |
Gallium Arsenide Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Gallium Arsenide Wafer
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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