Gallium Arsenide Wafer (GaAs)
Gallium Arsenide Wafer
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors.
Gallium Arsenide Wafer Physical Properties
| Material | GaAs |
|---|---|
| Growth Method | VGF, VB |
| Lattice (A) | a=5.653 |
| Structure | M3 |
| Melting Point | 1238℃ |
| Density(g/cm3) | 5.31 g/cm3 |
| Doped Material | Si-doped / Zn-doped/ Undoped |
| Type | N-type/P-type/ Semi-insulating |
| Carrier Concentration (cm-3) | 5 x 1017 |
| EPD (Average) | <5 x 105/cm2 |
Gallium Arsenide Wafer Specifications
| Size | 25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm,2'' Dia, 3'' Dia, 4'' Dia, 6" Dia (customized sizes are available) | ||
|---|---|---|---|
| Thickness | 350um, 650um (Tolerance: ±25um) | ||
| Polished | SSP or DSP | ||
| Orientation | <100>,<110>, <111> | ||
| Redirection Precision | ±0.5° | ||
| TTV | <10 um | ||
| Bow | <20 um | ||
| Warp | <20 um | ||
| Surface Roughness (Ra:) | <5Å | ||
Gallium Arsenide Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Gallium Arsenide Wafer
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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