InP Substrate
Introduction:
Indium phosphide (InP) is an important compound semiconductor material, which with the advantages of high electronic limit drift speed, good radiation resistance and good thermal conductivity. The materials are very suitable for manufacturing high frequency, high speed, high power microwave devices and integrated circuits. It's widely used in solid-state lighting, microwave communication, fiber-optic communication, solar cells, guidance/navigation, satellite and other fields such as civil and military.Physical Properties
| Material | InP |
|---|---|
| Growth Method | LEC,VCZ/P-LEC , VGF, VB |
| Lattice (A) | a=5.869 |
| Structure | M3 |
| Melting point | 1600℃ |
| Density(g/cm3) | 4.79 g/cm3 |
| Doped Material |
undoped
S-doped
Zn-doped
Fe-doped
|
| Type |
N
N
P
N
|
| Carrier concentration (cm-3) |
(0.4-2) x 1016
(0.8-3) x 1018
(4-6) x 1018
(0.6-2) x 1018
107-108
|
| Mobility (cm2v-1s-1) |
(3.5-4) x 103
(2.2-2.4) x 103
(1.3-1.6) x 103
70-90
≥2000
|
| EPD (Average) |
<5 x 104/cm2
3 x 104/cm2
2 x 103/cm2
2 x 104/cm2
3 x 104/cm2
|
Specification
| Size | 10 x 10 x 0.35mm, 10 x 5 x 0.35mm, 2'' Dia, 3'' Dia,4' Dia (customized size avalible) |
|---|---|
| Thickness | 0.35 mm, 0.6 mm |
| Polished | SSP or DSP |
| Orientation | <100>, <111> |
| Redirection precision | ±0.5° |
| Primary Flat Length | 16±2 mm, 22±2 mm, 32.5±2 mm |
| Scondary Flat Length | 8±1 mm, 11±1 mm, 18±1 mm |
| TTV | <10 um, <15 um |
| Bow | <10 um, <15 um |
| Warp | <15 um |
Package
100 clean bag, 1000 exactly clean room
Click for a downloadable datasheet on the InP Substrate
Can't find the downloadable datasheet you need? Click here to send email to get it.
Click here for answers to some of the most common questions we get asked.
