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Indium Phosphide Wafer (InP)

Indium Phosphide Wafer

Indium phosphide (InP) is an important compound semiconductor material with the advantages of high electronic limit drift speed, good radiation resistance, and good thermal conductivity. The materials are very suitable for manufacturing high frequency, high speed, high power microwave devices, and integrated circuits. It's widely used in solid-state lighting, microwave communication, fiber-optic communication, solar cells, guidance/navigation, satellite, and other civil and military fields.

Indium Phosphide Wafer Physical Properties

Material	InP
Growth Method	LEC,VCZ/P-LEC , VGF, VB
Lattice (A)	a=5.869
Structure	M3
Melting Point	1600℃
Density(g/cm3)	4.79 g/cm3
Doped Material	Undoped S-doped Zn-doped Fe-doped
Type	N N P N
Carrier Concentration (cm-3)	(0.4-2) x 10¹⁶ (0.8-3) x 10¹⁸ (4-6) x 10¹⁸ (0.6-2) x 10¹⁸ 10⁷-10⁸
Mobility (cm2v-1s-1)	(3.5-4) x 10³ (2.2-2.4) x 10³ (1.3-1.6) x 10³ 70-90 ≥2000
EPD (Average)	<5 x 10⁴/cm² 3 x 104/cm² 2 x 103/cm² 2 x 10⁴/cm² 3 x 10⁴/cm²

Indium Phosphide Wafer Specifications

Size	10 x 10 x 0.35mm, 10 x 5 x 0.35mm, 2'' Dia, 3'' Dia,4' Dia (customized sizes are available)
Thickness	0.35 mm, 0.6 mm
Polished	SSP or DSP
Orientation	<100>, <111>
Redirection Precision	±0.5°
Primary Flat Length	16±2 mm, 22±2 mm, 32.5±2 mm
Scondary Flat Length	8±1 mm, 11±1 mm, 18±1 mm
TTV	<10 um, <15 um
Bow	<10 um, <15 um
Warp	<15 um

Indium Phosphide Wafer Package

Packaged with class 100 clean bag or wafer container in a class 1000 clean room.

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