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InP Substrate

InP Substrate

Introduction:

Indium phosphide (InP) is an important compound semiconductor material, which with the advantages of high electronic limit drift speed, good radiation resistance and good thermal conductivity. The materials are very suitable for manufacturing high frequency, high speed, high power microwave devices and integrated circuits. It's widely used in solid-state lighting, microwave communication, fiber-optic communication, solar cells, guidance/navigation, satellite and other fields such as civil and military.

Physical Properties

Material InP
Growth Method LEC,VCZ/P-LEC , VGF, VB
Lattice (A) a=5.869
Structure M3
Melting point 1600℃
Density(g/cm3) 4.79 g/cm3
Doped Material
undoped 
S-doped
Zn-doped
Fe-doped
Type
N
N
P
N
Carrier concentration (cm-3)
(0.4-2) x 1016
(0.8-3) x 1018
(4-6) x 1018
(0.6-2) x 1018
107-108
Mobility (cm2v-1s-1)
(3.5-4) x 103
(2.2-2.4) x 103
(1.3-1.6) x 103
70-90
≥2000
EPD (Average)
<5 x 104/cm2
3 x 104/cm2
2 x 103/cm2
2 x 104/cm2
3 x 104/cm2

Specification

Size 10 x 10 x 0.35mm, 10 x 5 x 0.35mm, 2'' Dia, 3'' Dia,4' Dia (customized size avalible)
Thickness 0.35 mm, 0.6 mm  
Polished SSP or DSP
Orientation <100>, <111>
Redirection precision ±0.5°
Primary Flat Length 16±2 mm, 22±2 mm, 32.5±2 mm
Scondary Flat Length  8±1 mm, 11±1 mm, 18±1 mm
TTV <10 um, <15 um    
Bow <10 um, <15 um    
Warp <15 um    

Package

100 clean bag, 1000 exactly clean room
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