Indium Phosphide Wafer (InP)
Indium Phosphide Wafer
Indium phosphide (InP) is an important compound semiconductor material, which with the advantages of high electronic limit drift speed, good radiation resistance and good thermal conductivity. The materials are very suitable for manufacturing high frequency, high speed, high power microwave devices and integrated circuits. It's widely used in solid-state lighting, microwave communication, fiber-optic communication, solar cells, guidance/navigation, satellite and other fields such as civil and military.
Indium Phosphide Wafer Physical Properties
| Material | InP |
|---|---|
| Growth Method | LEC,VCZ/P-LEC , VGF, VB |
| Lattice (A) | a=5.869 |
| Structure | M3 |
| Melting point | 1600℃ |
| Density(g/cm3) | 4.79 g/cm3 |
| Doped Material |
undoped
S-doped
Zn-doped
Fe-doped
|
| Type |
N
N
P
N
|
| Carrier concentration (cm-3) |
(0.4-2) x 1016
(0.8-3) x 1018
(4-6) x 1018
(0.6-2) x 1018
107-108
|
| Mobility (cm2v-1s-1) |
(3.5-4) x 103
(2.2-2.4) x 103
(1.3-1.6) x 103
70-90
≥2000
|
| EPD (Average) |
<5 x 104/cm2
3 x 104/cm2
2 x 103/cm2
2 x 104/cm2
3 x 104/cm2
|
Indium Phosphide Wafer Specification
| Size | 10 x 10 x 0.35mm, 10 x 5 x 0.35mm, 2'' Dia, 3'' Dia,4' Dia (customized size avalible) |
|---|---|
| Thickness | 0.35 mm, 0.6 mm |
| Polished | SSP or DSP |
| Orientation | <100>, <111> |
| Redirection precision | ±0.5° |
| Primary Flat Length | 16±2 mm, 22±2 mm, 32.5±2 mm |
| Scondary Flat Length | 8±1 mm, 11±1 mm, 18±1 mm |
| TTV | <10 um, <15 um |
| Bow | <10 um, <15 um |
| Warp | <15 um |
Indium Phosphide Wafer Package
100 clean bag, 1000 exactly clean roomRelated Products of Indium Phosphide Wafer
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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