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AEM Deposition

Silicon Carbide (SiC)

Silicon Carbide (SiC)
Silicon Carbide (SiC)

Introduction:

Silicon Carbide (SiC) single crystal has excellent properties for high thermal conductivity, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for the preparation of high frequency, high power, high temperature and radiation resistant electronic devices.

Physical Properties

Material SiC
Growth method MOCVD
Crystal Structure M6
Lattice (A) a=3.08, c=15.08
Direction <0001> 3.5 º
Density(g/cm3) 3.21 g/cm3
Hardness 9.2(Mohns)
Melting point 1900℃
Heat travels @300K 5 W/ cm.k
Dielectric constants e(11)=e(22)=9.66 e(33)=10.33

Specification

Size 10x3, 10x5, 10x10, 15x15, 20x15, 20x20, Dia15, Dia 20, Dia 1'', Dia 2'', Dia 2.6''
Thickness 0.35 mm
Crystal Orientation  <0001>
Polished SSP or DSP
Redirection precision ±0.5°
Redirection the edge 2°(special in 1°)
Angle of crystalline Special size and orientation are avaiable for request
Ra: ≤5Å(5µm×5µm)

Package

100 clean bag, 1000 exactly clean room
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