Silicon Carbide Wafer (SiC)
Silicon Carbide Wafer
Silicon Carbide (SiC) single crystal has excellent thermal conductivity properties, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for preparing high frequency, high power, high temperature, and radiation-resistant electronic devices.
Silicon Carbide Wafer Physical Properties
| Material | SiC |
|---|---|
| Growth Method | MOCVD |
| Crystal Structure | M6 |
| Lattice (A) | a=3.08, c=15.08 |
| Direction | <0001> 3.5 º |
| Density(g/cm3) | 3.21 g/cm3 |
| Hardness | 9.2(Mohns) |
| Melting Point | 1900℃ |
| Heat Traveling @300K | 5 W/ cm.k |
| Dielectric Constants | e(11)=e(22)=9.66 e(33)=10.33 |
Silicon Carbide Wafer Specifications
| Size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20, Dia15, Dia 20, Dia 1'', Dia 2'', Dia 4", Dia 6'' |
|---|---|
| Thickness | 0.35 mm |
| Crystal Orientation | ＜0001> |
| Polished | SSP or DSP |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°（special in 1°） |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å（5µm×5µm） |
Silicon Carbide Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Silicon Carbide Wafer
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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